Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
January 2, 2007
Patent Application Number
10821886
Date Filed
April 12, 2004
Patent Primary Examiner
Patent abstract
A method for manufacturing a MOSFET equipped with a silicide layer over shallow source and drain junctions without leakage generation is provided. By restricting the temperature of manufacturing steps after the silicide formation below a critical temperature Tc, which is defined below as a function of a junction depth Dj from 20 nm to 60 nm, leakage generation is practically suppressed.Tc=a×Dj+b,
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