US Patent 7153743 Methods of fabricating non-volatile memory devices

Methods of fabricating non-volatile memory devices are disclosed. The resulting non-volatile memory devices include an additional protection film is formed on a control gate pattern to enable the control gate pattern to have a regular and smooth profile regardless of an etching process progressed intensively for removing an active cell isolation film from an active cell isolation trench by using the control gate pattern as a mask, so that the control gate pattern can avoid influence from the impurity even if an impurity injection process is progressed for forming a source diffusion layer, later.