US Patent 7151293 SONOS memory with inversion bit-lines

Patent 7151293 was granted and assigned to Spansion on December, 2006 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Current Assignee

Spansion

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

7151293

Date of Patent

December 19, 2006

Patent Application Number

10928582

Date Filed

August 27, 2004

Patent Primary Examiner

‌

Edward Wojciechowicz

Patent abstract

A SONOS memory cell, formed within a semiconductor substrate, includes a bottom dielectric disposed on the semiconductor substrate, a charge trapping material disposed on the bottom dielectric, and a top dielectric disposed on the charge trapping material. Furthermore, the SONOS memory cell includes a word-line gate structure disposed on the top dielectric and at least one bit-line gate for inducing at least one inversion bit-line within the semiconductor substrate.