Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Christophe Chevallier0
Darrell Rinerson0
Date of Patent
December 12, 2006
0Patent Application Number
110611000
Date Filed
February 18, 2005
0Patent Primary Examiner
Patent abstract
Non-volatile memory cell with a single semiconductor device per memory cell. The present invention generally allows for a plurality of memory cells to be formed on a semiconductor substrate that supports a semiconductor device. A multi-resistive state material layer that changes its resistive state between a low resistive state and a high resistive state upon application of a voltage pulse is formed above the substrate, generally at a very high temperature. While the layers fabricated between the substrate and the multi-resistive state material use materials that can withstand high temperature processing, the layers fabricated above the multi-resistive state material do not need to withstand high temperature processing.
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