Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Jae-Won Han0
Date of Patent
December 12, 2006
0Patent Application Number
110246100
Date Filed
December 30, 2004
0Patent Primary Examiner
Patent abstract
A method of manufacturing a semiconductor device. A cobalt film is formed on a wafer including gate, source, and drain regions. An initial protection metal film is formed with an initial amount of a protection metal film material on the cobalt film. The wafer is thermally treated to form a cobalt silicide film. An additional protection metal film is formed with an additional amount of the protection metal film material.
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