Patent attributes
A memory device is obtained in which stable recording of information can be performed and a period of time required for the recording of information can be shortened. The memory device includes a memory cell C formed of a memory element Amn having a characteristic in which a resistance value changes when applying between both ends of the memory element Amn a voltage equal to or more than a threshold voltage and a circuit element Tmn as a load connected in series to the memory element Amn; and when an operation to change the memory element Amn from a state of high resistance value to a state of low resistance value is defined as writing and when a voltage applied between both ends of the memory element Amn and the circuit element Tmn is equal to or more than a certain voltage value which is larger than the threshold voltage, the memory device has a characteristic in which a combined resistance value of the memory element Amn and the circuit element Tmn in the memory cell C after writing becomes almost constant value irrespective of the magnitude of applied voltage.
