US Patent 7145205 Semiconductor device
Patent 7145205 was granted and assigned to Renesas Technology Corp on December, 2006 by the United States Patent and Trademark Office.
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A semiconductor device includes: a semiconductor substrate having two types of active regions that are a PMOS region and an NMOS region separated from each other in plan view by a PN separation film; and a dual-gate electrode extending linearly across the PMOS region, the PN separation film and the NMOS region collectively on an upper side of the semiconductor substrate. The dual-gate electrode includes a P-type portion, an N-type portion and a PN junction positioned therebetween. The PN junction includes a silicide region. The silicide region is apart from both the PMOS region and the NMOS region and formed within the area of the PN separation film in plan view.
US Patent 07145205 Semiconductor device US Patent 7145205 Semiconductor device
US Patent 07145205 Semiconductor device
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