Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
November 28, 2006
Patent Application Number
11198089
Date Filed
August 5, 2005
Patent Primary Examiner
Patent abstract
A semiconductor laser includes an active layer formed on a substrate and a pair of cladding layers sandwiching the active layer. On at least one of resonator end faces of the semiconductor laser, a first dielectric film with hydrogen added therein is provided. Between the first dielectric film and the resonator end face, a second dielectric film for suppressing the diffusion of hydrogen is provided. Even when a semiconductor laser with an end face coating film including a hydrogen-added film is exposed to high temperatures, peeling of the end face coating film and deterioration of the end face coating film can be suppressed.
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