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US Patent 7139188 Memory architecture and method of manufacture and operation thereof

Patent 7139188 was granted and assigned to Micron Technology on November, 2006 by the United States Patent and Trademark Office.

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Patent
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Patent attributes

Current Assignee
Micron Technology
Micron Technology
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
7139188
Patent Inventor Names
Terry L. Gilton1
John T. Moore1
Date of Patent
November 21, 2006
Patent Application Number
11346386
Date Filed
February 3, 2006
Patent Primary Examiner
‌
Tuan T Nguyen
Patent abstract

An architecture, and its method of formation and operation, containing a high density memory array of semi-volatile or non-volatile memory elements, including, but not limited to, programmable conductive access memory elements. The architecture in one exemplary embodiment has a pair of semi-volatile or non-volatile memory elements which selectively share a bit line through respective first electrodes and access transistors controlled by respective word lines. The memory elements each have a respective second electrode coupled thereto which in cooperation with the bit line access transistors and first electrode, serves to apply read, write and erase signals to the memory element.

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