Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
November 21, 2006
Patent Application Number
10940513
Date Filed
September 14, 2004
Patent Primary Examiner
Patent abstract
A memory device comprises a substrate including isolation regions and active regions, and a floating gate stack proximate the substrate. The floating gate stack comprises a first high-k dielectric layer proximate the substrate, a first metal layer proximate the first high-k dielectric layer, and a second high-k dielectric layer proximate the first metal layer. The memory device comprises a control gate electrode proximate the floating gate stack.
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