Patent 7138352 was granted and assigned to Yageo on November, 2006 by the United States Patent and Trademark Office.
The present invention relates to a novel ZnTiO3-based dielectric material, having the composition represented by the formula (Zn1-aMga)(Ti1-b-cMnbDc)dO3, wherein D is an element having a valence of 5 or above, 0≦a≦0.5, c≦b≦0.1, 0<c≦0.1, 1≦d≦1.5, which has properties of ultra low sintering temperature, high reliability, and high dielectric strength, and is capable of being applied to produce low capacitance multilayer ceramic capacitor with high quality factor, low ESR, and high insulation resistance. The present invention also relates to a method of preparing such a novel ZnTiO3-based dielectric material.