Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hironobu Sai0
Date of Patent
November 7, 2006
0Patent Application Number
108979150
Date Filed
July 23, 2004
0Patent Primary Examiner
Patent abstract
A method of fabricating a compound semiconductor layer has steps of forming a first layer made of an oxidizable material on a substrate, forming a second layer made of a compound semiconductor on the first layer, oxidizing the first layer made of the oxidizable material to an oxide layer and forming a third layer made of compound semiconductor that constitutes a semiconductor element on the second layer.
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