Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hilke Donohue0
Date of Patent
October 31, 2006
0Patent Application Number
104838050
Date Filed
July 15, 2002
0Patent Primary Examiner
Patent abstract
This invention relates to a method of depositing a tantalum film in which α-Ta dominates and to methods of electroplating copper using such films. The films have a thickness of less than 300 nm and are formed by depositing a seed layer of an organic containing low dielectric constant insulating layer and sputtering tantalum onto the seed layer at a temperature below 250° C.
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