US Patent 7126319 Low leakage CMOS power mux
Patent 7126319 was granted and assigned to Broadcom (company) on October, 2006 by the United States Patent and Trademark Office.
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A power supply multiplexing circuit including a first supply voltage input. A first pair of cascoded PMOS transistors are in series with the first supply voltage input. A first native NMOS transistor is in series with the first pair of cascoded PMOS transistors. Also, a second supply voltage input and a second pair of cascoded PMOS transistors are in series with the second supply voltage input; and a second native NMOS transistor in series with the second pair of cascoded PMOS transistors. The gates of the first and second native NMOS transistors are driven by two control signals out of phase with each other, and sources of the first and second native NMOS transistors are connected together to output an output voltage.
US Patent 07126319 Low leakage CMOS power mux US Patent 7126319 Low leakage CMOS power mux
US Patent 07126319 Low leakage CMOS power mux
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