Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Cha Deok Dong0
Date of Patent
October 24, 2006
0Patent Application Number
111600910
Date Filed
June 8, 2005
0Patent Primary Examiner
Patent abstract
A method of fabricating a flash memory devices disclosed wherein, upon formation of sidewall oxide films, a regrown thickness of a screen oxide film is controlled. The width of an element isolation film is reduced by means of an etch process for removing the re-growth oxide film. This allows a floating gate space to be easily secured, and a thickness of the sidewall oxide films is reduced by means of a liner nitride film pre-treatment cleaning process. It is thus possible to secure the trench space, which facilitates gap-filling.
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