Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
October 17, 2006
Patent Application Number
10688873
Date Filed
October 21, 2003
Patent Primary Examiner
Patent abstract
A semiconductor device has anisotropically formed via holes through a PMD layer. The anisotropic geometry of the via holes results in the diameter of a via hole over a gate structure being equal to the diameter of a via hole not over the gate structure. The via holes are formed by depositing a silicon layer and an antireflective layer over the PMD layer. The silicon layer and the antireflective layer are etched to have holes with a regular taper. The holes through the PMD are anisotropically etched so as to have straight walls.
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