US Patent 7120181 Semiconductor laser device and method of fabricating the same

Patent 7120181 was granted and assigned to Sanyo Electric Co Ltd on October, 2006 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Current Assignee

Sanyo Electric Co Ltd

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

71201810

Patent Inventor Names

Nobuhiko Hayashi0

Takenori Goto0

Date of Patent

October 10, 2006

Patent Application Number

095327860

Date Filed

March 22, 2000

Patent Primary Examiner

‌

Armando Rodriguez

Patent abstract

In a semiconductor laser device, an AlGaN buffer layer, a GaN layer, an n-GaN layer, an n-AlGaN cladding layer, an MQW light emitting layer, a p-AlGaN cladding layer, a p-first GaN cap layer, a current blocking layer composed of n-AlGaN, and a p-second GaN cap layer are stacked in this order on a sapphire substrate, and a ridge portion having an upper surface having a width W1 is formed by etching. The current blocking layer has an opening having a width W2 on the upper surface of the ridge portion. The width W2 of the opening is smaller than the width W1 of the upper surface of the ridge portion. Accordingly, in a light emitting region of the MQW light emitting layer, a saturable light absorbing region is formed on both sides of a current injection region.