US Patent 7110303 Memory cell testing feature

An electronic memory device includes at least one memory cell, a write circuit that defines an output node and mediates a discharge associated with a write operation flowing to the output node, and a write strength selection circuit that modifies at least one characteristic of the discharge. A method for testing data retention of an electronic memory device includes providing a write circuit, storing a value in at least one memory cell of the memory device, directing a weak write operation to the at least one memory cell, and sensing the memory cell to determine if the stored value changed in response to the weak write operation.