US Patent 7109111 Method of annealing metal layers

Patent 7109111 was granted and assigned to Applied Materials on September, 2006 by the United States Patent and Trademark Office.

Overview Structured Data Issues Contributors Activity

Is a

Patent

Patent attributes

Current Assignee

Applied Materials

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

7109111

Date of Patent

September 19, 2006

Patent Application Number

10074353

Date Filed

February 11, 2002

Patent Primary Examiner

‌

Thao P. Le

Patent abstract

A method of annealing a metal layer on a substrate in a chamber is provided. The method comprises positioning a substrate with a metal layer thereon in a chamber, removing atmospheric gases from the chamber, providing process gas to the chamber, and annealing the metal layer at a temperature greater than about 80 degrees Celsius. Also provided is a method of forming a feature on a substrate. The method comprises depositing a dielectric layer on the substrate, forming at least one opening within the dielectric layer, depositing a metal layer in the opening, positioning the substrate in an annealing chamber, removing atmospheric gases from the annealing chamber, providing process gas to the annealing chamber, and annealing the metal layer at temperature greater than about 80 degrees Celsius.