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US Patent 7109111 Method of annealing metal layers

Patent 7109111 was granted and assigned to Applied Materials on September, 2006 by the United States Patent and Trademark Office.

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Patent
Patent

Patent attributes

Current Assignee
Applied Materials
Applied Materials
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
7109111
Date of Patent
September 19, 2006
Patent Application Number
10074353
Date Filed
February 11, 2002
Patent Primary Examiner
‌
Thao P. Le
Patent abstract

A method of annealing a metal layer on a substrate in a chamber is provided. The method comprises positioning a substrate with a metal layer thereon in a chamber, removing atmospheric gases from the chamber, providing process gas to the chamber, and annealing the metal layer at a temperature greater than about 80 degrees Celsius. Also provided is a method of forming a feature on a substrate. The method comprises depositing a dielectric layer on the substrate, forming at least one opening within the dielectric layer, depositing a metal layer in the opening, positioning the substrate in an annealing chamber, removing atmospheric gases from the annealing chamber, providing process gas to the annealing chamber, and annealing the metal layer at temperature greater than about 80 degrees Celsius.

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