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Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Horng-Huei Tseng0
Chao-Hsiung Wang0
Chen-Hua Yu0
Chenming Hu0
Date of Patent
September 12, 2006
0Patent Application Number
106842240
Date Filed
October 10, 2003
0Patent Primary Examiner
Patent abstract
Semiconductor devices and methods of forming the semiconductor devices using an HTS (High Temperature Superconductor) layer in combination with a typical diffusion layer between the dielectric material and the copper (or other metal) conductive wiring. The HTS layer includes a superconductor material comprised of barium copper oxide and a rare earth element. The rare earth element yttrium is particularly suitable. For semiconductor devices having other semiconductor circuits or elements above the wiring, a capping layer of HTS material is deposited over the wiring before a cover layer of dielectric is deposited.
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