US Patent 7101735 Manufacturing method of semiconductor device
Patent 7101735 was granted and assigned to Sanyo on September, 2006 by the United States Patent and Trademark Office.
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A first glass substrate is bonded through a resin to a top surface of a semiconductor wafer on which a first wiring is formed. A second glass substrate is bonded to a back surface of the semiconductor wafer through a resin. A V-shaped groove is formed by notching from a surface of the second glass substrate through a part of the first glass substrate. A second wiring connected with the first wiring and extending to the surface of the second glass substrate is formed. A protection film composed of an organic resin and a photoresist layer to provide the protection film with an opening are formed on the second wiring by spray coating. A conductive terminal is formed by screen printing using the protection film as a solder mask. A cushioning material may be formed on the second glass substrate by spray coating.
US Patent 07101735 Manufacturing method of semiconductor device US Patent 7101735 Manufacturing method of semiconductor device
US Patent 07101735 Manufacturing method of semiconductor device
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