Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
August 15, 2006
0Patent Application Number
109167740
Date Filed
August 12, 2004
0Patent Primary Examiner
Patent abstract
In the inventive method of producing a base terminal structure for a bipolar transistor, an etch stop layer is applied on a single-crystal semiconductor substrate, a poly-crystal base terminal layer is produced on the etch stop layer and an emitter window is etched in the base terminal layer using the etch stop layer as an etch stop.
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