US Patent 7087470 Dual gate dielectric thickness devices
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Patent Inventor Names
Brent A. Anderson0
Terence B. Hook0
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Patent abstract
A semiconductor device and a method of fabricating the semiconductor device, the semiconductor device including: one or more FETs of a first polarity and one or more FETs of a second and opposite polarity, at least one of the one or more FETs of the first polarity having a gate dielectric having a thickness different from a thickness of a gate dielectric of at least one of the one or more FETs of the second polarity.
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US Patent 07087470 Dual gate dielectric thickness devices US Patent 7087470 Dual gate dielectric thickness devices
Infobox
Patent Number
070874700
Patent Number
70874700
Edits on 29 Mar, 2023
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Patent Jurisdiction
Patent Number
070874700
Date of Patent
August 8, 2006
0Patent Application Number
108730120
Date Filed
June 21, 2004
0Official Website
Patent Primary Examiner
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US Patent 07087470 Dual gate dielectric thickness devices
Infobox
Is a
Patent jurisdiction
Patent number
07087470
Date of patent
August 8, 2006
Patent application number
10873012
Date Filed
June 21, 2004
Patent primary examiner
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