Patent attributes
A semiconductor device includes an upper wiring layer, a lower wiring layer, an electrically insulating layer sandwiched between the upper and lower wiring layers, a tungsten plug formed in a through-hole formed through the electrically insulating layer, for electrically connecting the upper and lower wiring layers to each other, a titanium film covering an inner surface of the through-hole and a surface of the electrically insulating layer therewith, a first titanium nitride film entirely covering the titanium film therewith, and a second titanium nitride film covering the first titanium nitride film and a surface of the tungsten plug therewith.