Patent attributes
A piezoelectric resonator element of crystallographic point group 32, which can be operated as a thickness shear resonator contacting a carrier medium includes a singly rorated Y-cut (S1,S2) that is essentially rotated through an angle φabout the crystallographic x-axis, which differs from crystal cuts that are temperature-compensated in air or vacuum, wherein the cut has a negative temperatue coeffcient of the resonace frequency f(T) in a predetermined temperature range, preferably between 10° C. and 40° C., when there is no contact with the carrier medium, while the value of the linear temperature coeffcient a of resonance frequency in the same temperature range is less than 1 ppm/° C., preferably less than 0.5 ppm/° C. when the resonator is inb contact with the carrier medium. The resonator element (1) can additionally be provided with at least one layer sensitive to the parameter to be measured.
