Patent 6972478 was granted and assigned to Advanced Micro Devices on December, 2005 by the United States Patent and Trademark Office.
An integrated circuit and methods for its manufacture are provided. The integrated circuit comprises a bulk silicon substrate having a first region of <100> crystalline orientation and a second region of <110> crystalline orientation. A layer of silicon on insulator overlies a portion of the bulk silicon substrate. At least one field effect transistor is formed in the layer of silicon on insulator, at least one P-channel field effect transistor is formed in the second region of <110> crystalline orientation, and at least one N-channel field effect transistor is formed in the first region of <100> crystalline orientation.