Is a
Patent attributes
Patent Applicant
0
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hiroki Adachi0
Yasuhiko Takemura0
Date of Patent
January 11, 2005
0Patent Application Number
093217150
Date Filed
May 28, 1999
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device comprising at least two thin film transistors on a substrate having an insulating surface thereon, provided that the thin film transistors are isolated by oxidizing the outer periphery of the active layer of each of the thin film transistors to the bottom to provide an oxide insulating film.
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