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US Patent 12132041 Semiconductor device

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
June 3, 2021
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Date of Patent
October 29, 2024
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Patent Application Number
17338355
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Patent Citations
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US Patent 9236300 Contact plugs in SRAM cells and the method of forming the same
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US Patent 9406804 FinFETs with contact-all-around
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US Patent 9443769 Wrap-around contact
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US Patent 9520482 Method of cutting metal gate
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US Patent 9548366 Self aligned contact scheme
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US Patent 9831183 Contact structure and method of forming
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US Patent 9576814 Method of spacer patterning to form a target integrated circuit pattern
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US Patent 9859386 Self aligned contact scheme
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US Patent 9105490 Contact structure of semiconductor device
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US Patent 9236267 Cut-mask patterning process for fin-like field effect transistor (FinFET) device
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Patent Inventor Names
Derek C. Tao
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Jacklyn Chang
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Kuo-Yuan Hsu
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
12132041
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Patent Primary Examiner
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Julio J Maldonado
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CPC Code
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H01L 2224/73255
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H01L 2224/73263
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H01L 2224/41505
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H01L 2224/4103
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H01L 2224/73205
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H01L 2224/38
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H01L 2224/40998
0
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H01L 2224/40993
0
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H01L 2224/4001
0
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H01L 2224/73213
0

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