Patent 12131765 was granted and assigned to Micron Technology on October, 2024 by the United States Patent and Trademark Office.
Systems and methods described herein may enable a memory system to selectively provide a signal boost to a word line to precharge the word line. A memory device may include voltage shaping circuitry and a memory controller. The memory controller may cause the voltage shaping circuitry to adjust a characteristic of a word line select control signal transmitted via the word line prior to the word line select control signal being transmitted to a memory cell.