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US Patent 12125918 Semiconductor device

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
February 23, 2021
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Date of Patent
October 22, 2024
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Patent Application Number
17182270
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Patent Citations
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US Patent 9269821 Semiconductor device
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US Patent 10319723 Semiconductor device
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US Patent 10505049 Semiconductor device has an oxide semiconductor layer containing a c-axis aligned crystal
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US Patent 10861983 Semiconductor device comprising oxide semiconductor layer containing a c-axis aligned crystal
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US Patent 11342464 Semiconductor device comprising first and second insulating layer each has a tapered shape
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US Patent 7049190 Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device
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US Patent 7061014 Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
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US Patent 7064346 Transistor and semiconductor device
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US Patent 7105868 High-electron mobility transistor with zinc oxide
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US Patent 7211825 Indium oxide-based thin film transistors and circuits
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•••
Patent Inventor Names
Shunpei Yamazaki
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
12125918
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Patent Primary Examiner
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Moin M Rahman
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