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US Patent 12125843 Electrostatic discharge protection device

Patent 12125843 was granted and assigned to ChangXin Memory Technologies on October, 2024 by the United States Patent and Trademark Office.

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Patent abstractTimelineTable: Further ResourcesReferences
Is a
Patent
Patent
1

Patent attributes

Patent Applicant
ChangXin Memory Technologies
ChangXin Memory Technologies
1
Current Assignee
ChangXin Memory Technologies
ChangXin Memory Technologies
1
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
1
Patent Number
121258431
Patent Inventor Names
Qian Xu1
Date of Patent
October 22, 2024
1
Patent Application Number
176432741
Date Filed
December 8, 2021
1
Patent Citations
‌
US Patent 10504886 Low-capacitance electro-static-discharge (ESD) protection structure with two floating wells
1
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US Patent 7601991 On-chip structure for electrostatic discharge (ESD) protection
1
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US Patent 9831666 Apparatus and methods for electrostatic discharge protection of radio frequency interfaces
1
Patent Primary Examiner
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Herve-Louis Y Assouman
1
CPC Code
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H01L 27/0255
1
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H01L 27/0288
1
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H01L 27/0292
1
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H01L 27/027
1
Patent abstract

The present disclosure provides an electrostatic protection device, and relates to the technical field of semiconductors. The electrostatic discharge protection device includes a first P-type heavily-doped region, a first N-type heavily-doped region, a second N-type heavily-doped region, a second P-type heavily-doped region, and a third N-type heavily-doped region. The first P-type heavily-doped region and the first N-type heavily-doped region are located in a P well, the second P-type heavily-doped region and the third N-type heavily-doped region are located in a first N well, one part of the second N-type heavily-doped region is located in the P well, the other part of the second N-type heavily-doped region is located in first N well, and the P well and the first N well are adjacent to each other and both located in the P-type substrate.

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