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US Patent 12124095 Optical multi-die interconnect bridge with optical interface

Patent 12124095 was granted and assigned to Celestial AI on October, 2024 by the United States Patent and Trademark Office.

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Contents

Is a
Patent
Patent
0

Patent attributes

Patent Applicant
Celestial AI
Celestial AI
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Current Assignee
Celestial AI
Celestial AI
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
121240950
Patent Inventor Names
Ankur Aggarwal0
Subal Sahni0
Philip Winterbottom0
Martinus Bos0
David Lazovsky0
Date of Patent
October 22, 2024
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Patent Application Number
182434740
Date Filed
September 7, 2023
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Patent Citations
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US Patent 7894699 Photonic based interconnects for interconnecting multiple integrated circuits
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US Patent 7961990 Multi-chip system including capacitively coupled and optical communication
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US Patent 8059443 Three-dimensional memory module architectures
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US Patent 8064739 Three-dimensional die stacks with inter-device and intra-device optical interconnect
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US Patent 8213751 Electronic-integration compatible photonic integrated circuit and method for fabricating electronic-integration compatible photonic integrated circuit
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US Patent 8260147 System-on-chip having optical interconnections
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US Patent 8285140 Shared-source-row optical data channel organization for a switched arbitrated on-chip optical network
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US Patent 8288854 Semiconductor package and method for making the same
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Patent Primary Examiner
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Ryan A Lepisto
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CPC Code
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G02B 6/4245
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G02B 6/4246
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G02B 6/428
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G02B 6/4295
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G02B 6/43
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G02F 1/0157
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Patent abstract

A package includes a bridging element (an OMIB), and first and second photonic paths, forming a bidirectional photonic path. The OMIB has first and second interconnect regions to connect with one or more dies. Third and fourth unidirectional photonic paths may couple between the first interconnect region and an optical interface (OI). A photonic transceiver has a first portion in the OMIB and a second portion in one of the dies. The first and the second portions may be coupled via an electrical interconnect less than 2 mm in length. The die includes compute elements around a central region, proximate to the second portion. The OMIB may include an electro-absorption modulator fabricated with germanium, silicon, an alloy of germanium, an alloy of silicon, a III-V material based on indium phosphide (InP), or a III-V material based on gallium arsenide (GaAs). The OMIB may include a temperature compensation for the modulator.

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