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US Patent 12119346 Vertical field-effect transistor with wrap-around contact structure
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Patent
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Date Filed
September 21, 2021
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Date of Patent
October 15, 2024
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Patent Application Number
17480717
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Patent Citations
US Patent 10084094 Wrapped source/drain contacts with enhanced area
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US Patent 10192867 Complementary FETs with wrap around contacts and method of forming same
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US Patent 10665590 Wrap-around contact surrounding epitaxial regions of integrated circuit structures and method of forming same
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US Patent 10483361 Wrap-around-contact structure for top source/drain in vertical FETs
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US Patent 10923590 Wrap-around contact for vertical field effect transistors
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US Patent 9425310 Methods for forming wrap around contact
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US Patent 9735253 Closely packed vertical transistors with reduced contact resistance
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Patent Inventor Names
Kangguo Cheng
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Shogo Mochizuki
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Juntao Li
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
12119346
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Patent Primary Examiner
Andres Munoz
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CPC Code
H01L 29/0847
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H01L 29/6656
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H01L 29/66795
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H01L 29/7851
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H01L 21/76843
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H01L 21/76897
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H01L 23/485
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H01L 29/456
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H01L 29/4966
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H01L 29/517
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