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US Patent 12119231 Semiconductor device and method

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
July 27, 2022
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Date of Patent
October 15, 2024
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Patent Application Number
17874694
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Patent Citations
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US Patent 9520482 Method of cutting metal gate
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US Patent 9006786 Fin structure of semiconductor device
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US Patent 9105490 Contact structure of semiconductor device
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US Patent 9236267 Cut-mask patterning process for fin-like field effect transistor (FinFET) device
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US Patent 9236300 Contact plugs in SRAM cells and the method of forming the same
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US Patent 9406804 FinFETs with contact-all-around
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US Patent 9443769 Wrap-around contact
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US Patent 9548366 Self aligned contact scheme
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US Patent 9559184 Devices including gate spacer with gap or void and methods of forming the same
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US Patent 9576814 Method of spacer patterning to form a target integrated circuit pattern
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•••
Patent Inventor Names
Ching-Feng Fu
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Yu-Lien Huang
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Guan-Ren Wang
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
12119231
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Patent Primary Examiner
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Bac H Au
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CPC Code
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H01L 27/0886
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H01L 29/7851
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H01L 29/7855
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H01L 29/0603
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H01L 29/0684
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H01L 29/41783
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H01L 21/823871
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H01L 21/28518
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H01L 21/76831
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H01L 21/823814
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•••

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