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US Patent 12113069 Thermal extraction of single layer transfer integrated circuits

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
September 1, 2022
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Date of Patent
October 8, 2024
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Patent Application Number
17901189
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Patent Citations
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US Patent 7910993 Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink
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US Patent 8048753 Charging protection device
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US Patent 8466054 Thermal conduction paths for semiconductor structures
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US Patent 9276104 High-frequency semiconductor device and method of manufacturing the same
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US Patent 9385083 Wafer-level die to package and die to die interconnects suspended over integrated heat sinks
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US Patent 9472512 Integrated circuits with contacts through a buried oxide layer and methods of producing the same
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US Patent 9530798 High performance heat shields with reduced capacitance
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US Patent 9755029 Switch device performance improvement through multisided biased shielding
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US Patent 9780210 Backside semiconductor growth
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US Patent 9837412 S-contact for SOI
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•••
Patent Inventor Names
Alain Duvallet
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Ronald Eugene Reedy
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Richard James Dowling
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Abhijeet Paul
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Hiroshi Yamada
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
12113069
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Patent Primary Examiner
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Laura M Menz
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CPC Code
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H01L 21/823481
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H01L 21/4882
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H01L 27/1203
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