US Patent 12112980 Method to create air gaps
Patent 12112980 was granted and assigned to Lam Research on October, 2024 by the United States Patent and Trademark Office.
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US Patent 12112980 Method to create air gaps
Article
Patent abstract
Tin oxide films are used to create air gaps during semiconductor substrate processing. Tin oxide films, disposed between exposed layers of other materials, such as SiO
Infobox
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Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Bart J. van Schravendijk0
Patrick A. van Cleemput0
Seshasayee Varadarajan0
Date of Patent
October 8, 2024
0Patent Application Number
173046970
Date Filed
June 24, 2021
0Patent Citations
Patent Primary Examiner
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