Patent attributes
In some embodiments, information specifying a transistor to be generated is received, the information comprising an on resistance. A total width of a gate of the transistor to be generated is determined based at least on the on resistance. A first width, a number of fingers (F), and a number of device cells (P) are determined based on the total width. A transistor level schematic is generated comprising one or more transistors configured with the first width and the number of fingers (F). A layout is generated, wherein the layout comprises P device cells, each device cell comprising a plurality of gates corresponding to said number of fingers (F) each gate having said first width, wherein the device cells are configured in a two-dimensional array.
