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US Patent 12087616 Air gap formation method

Patent 12087616 was granted and assigned to Taiwan Semiconductor Manufacturing Company on September, 2024 by the United States Patent and Trademark Office.

Overview Structured Data Issues Contributors Activity

Is a

Patent

Current Assignee

Taiwan Semiconductor Manufacturing Company

Date Filed

April 14, 2022

Date of Patent

September 10, 2024

Patent Applicant

Taiwan Semiconductor Manufacturing Company

Patent Application Number

17720789

Patent Citations

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US Patent 9520482 Method of cutting metal gate

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US Patent 9576814 Method of spacer patterning to form a target integrated circuit pattern

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US Patent 9608116 FINFETs with wrap-around silicide and method forming the same

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US Patent 9859380 FinFETs with strained well regions

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US Patent 9812363 FinFET device and method of forming same

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US Patent 8962400 In-situ doping of arsenic for source and drain epitaxy

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US Patent 9093514 Strained and uniform doping technique for FINFETs

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US Patent 9236267 Cut-mask patterning process for fin-like field effect transistor (FinFET) device

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US Patent 9245805 Germanium FinFETs with metal gates and stressors

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US Patent 9418897 Wrap around silicide for FinFETs

Patent Inventor Names

Chin-Hsiang Lin

Chun-Chih Ho

Ching-Yu Chang

Yu-Chung Su

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

12087616

Patent Primary Examiner

CPC Code

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