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US Patent 12060639 Rapid flush purging during atomic layer deposition

Patent 12060639 was granted and assigned to Lam Research on August, 2024 by the United States Patent and Trademark Office.

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 US Patent 12060639 Rapid flush purging during atomic layer deposition

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Patent abstract

Provided herein are methods and related apparatus for purging processing chambers during an atomic layer deposition (ALD) process. The methods involve flowing purging gas from one or more accumulators to remove process gases from the processing chambers. Following the flowing of purging gas, additional reactants may be introduced into the processing chamber to continue an ALD cycle.

Infobox
Is a
Patent
Patent
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Patent Applicant
Lam Research
Lam Research
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Current Assignee
Lam Research
Lam Research
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
120606390
Patent Inventor Names
Juwen Gao0
Novy Tjokro0
Pragna Nannapaneni0
Ruopeng Deng0
Sanjay Gopinath0
Sema Ermez0
Tianhua Yu0
Xiaolan Ba0
Date of Patent
August 13, 2024
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Patent Application Number
175943660
Date Filed
April 15, 2020
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Patent Citations
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US Patent 7153783 Materials with enhanced properties for shallow trench isolation/premetal dielectric applications
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US Patent 7211525 Hydrogen treatment enhanced gap fill
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US Patent 7238604 Forming thin hard mask over air gap or porous dielectric
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US Patent 7365000 Method for fabricating semiconductor device
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US Patent 7498273 Formation of high quality dielectric films of silicon dioxide for STI: usage of different siloxane-based precursors for harp II—remote plasma enhanced deposition processes
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US Patent 7521378 Low temperature process for polysilazane oxidation/densification
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US Patent 7524735 Flowable film dielectric gap fill process
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US Patent 7575633 Fluid dispenser with positive displacement pump
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US Patent 7582555 CVD flowable gap fill
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US Patent 7585704 Method of producing highly strained PECVD silicon nitride thin films at low temperature
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US Patent 7589012 Method for fabricating semiconductor memory device
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US Patent 7622369 Device isolation technology on semiconductor substrate
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US Patent 7629227 CVD flowable gap fill
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US Patent 7655532 STI film property using SOD post-treatment
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US Patent 7727906 H2-based plasma treatment to eliminate within-batch and batch-to-batch etch drift
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US Patent 7794544 Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
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US Patent 7804130 Self-aligned V-channel MOSFET
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US Patent 7825044 Curing methods for silicon dioxide multi-layers
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US Patent 8557712 PECVD flowable dielectric gap fill
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US Patent 8580697 CVD flowable gap fill
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US Patent 8846536 Flowable oxide film with tunable wet etch rate
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US Patent 9064684 Flowable oxide deposition using rapid delivery of process gases
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US Patent 11549175 Method of depositing tungsten and other metals in 3D NAND structures
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US Patent 6846757 Dielectric layer for a semiconductor device and method of producing the same
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US Patent 6858195 Process for forming a low dielectric constant fluorine and carbon-containing silicon oxide dielectric material
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US Patent 6902947 Integrated method for release and passivation of MEMS structures
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US Patent 6984561 Method for making high density nonvolatile memory
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US Patent 7033945 Gap filling with a composite layer
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US Patent 7056560 Ultra low dielectric materials based on hybrid system of linear silicon precursor and organic porogen by plasma-enhanced chemical vapor deposition (PECVD)
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US Patent 7071126 Densifying a relatively porous material
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US Patent 7074690 Selective gap-fill process
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US Patent 7074727 Process for improving dielectric properties in low-k organosilicate dielectric material
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US Patent 7084505 Porous film, composition and manufacturing method, interlayer dielectric film, and semiconductor device
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Patent Primary Examiner
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Jasmine J Clark
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CPC Code
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C23C 16/45527
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C23C 16/08
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H01L 21/28568
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H01L 21/28518
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