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US Patent 12027224 Authenticity and yield by reading defective cells

OverviewStructured DataIssuesContributors
Is a
Patent
Patent
0
Date Filed
March 16, 2022
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Date of Patent
July 2, 2024
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Patent Application Number
17654998
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Patent Citations
‌
US Patent 9495627 Magnetic tunnel junction based chip identification
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US Patent 9875155 Memory device for performing error correction code operation and redundancy repair operation
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US Patent 10235258 Memory device capable of quickly repairing fail cell
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US Patent 10134487 Semiconductor memory device and memory system including the same
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US Patent 10761997 Methods of memory address verification and memory devices employing the same
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US Patent 7370251 Method and circuit for collecting memory failure information
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US Patent 9123429 Redundancy system for non-volatile memory
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Patent Inventor Names
Julien Frougier
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Ruilong Xie
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Kangguo Cheng
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
12027224
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Patent Primary Examiner
‌
Sultana Begum
0

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