US Patent 12021135 Bottom source/drain etch with fin-cut-last-VTFET

Patent

US Patent 9530700 Method of fabricating vertical field effect transistors with protective fin liner during bottom spacer recess etch

US Patent 9761727 Vertical FETs with variable bottom spacer recess

US Patent 9812443 Forming vertical transistors and metal-insulator-metal capacitors on the same chip

US Patent 9842933 Formation of bottom junction in vertical FET devices

US Patent 9865705 Vertical field effect transistors with bottom source/drain epitaxy

US Patent 9935102 Method and structure for improving vertical transistor

US Patent 9954102 Vertical field effect transistor with abrupt extensions at a bottom source/drain structure

US Patent 10141446 Formation of bottom junction in vertical FET devices

US Patent 10141448 Vertical FETs with different gate lengths and spacer thicknesses

US Patent 10217846 Vertical field effect transistor formation with critical dimension control

United States Patent and Trademark Office

Mohammad M Hoque

H01L 27/092

H01L 21/823885

H01L 21/823814

H01L 29/0847

H01L 29/66666

H01L 29/7827

H01L 29/0653