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US Patent 12020991 High-k gate dielectric and method forming same

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
August 26, 2021
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Date of Patent
June 25, 2024
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Patent Application Number
17412967
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Patent Citations
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US Patent 9236267 Cut-mask patterning process for fin-like field effect transistor (FinFET) device
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US Patent 9245805 Germanium FinFETs with metal gates and stressors
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US Patent 9418897 Wrap around silicide for FinFETs
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US Patent 9520482 Method of cutting metal gate
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US Patent 9576814 Method of spacer patterning to form a target integrated circuit pattern
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US Patent 9812363 FinFET device and method of forming same
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US Patent 9608116 FINFETs with wrap-around silicide and method forming the same
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US Patent 9859380 FinFETs with strained well regions
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US Patent 8962400 In-situ doping of arsenic for source and drain epitaxy
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US Patent 9093514 Strained and uniform doping technique for FINFETs
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Patent Inventor Names
Chi On Chui
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Che-Hao Chang
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Da-Yuan Lee
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Cheng-Hao Hou
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
12020991
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Patent Primary Examiner
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Bryan R Junge
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CPC Code
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H01L 27/0922
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H01L 21/823857
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H01L 21/823842
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H01L 21/823828
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