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US Patent 12016131 Transfer printing high-precision devices

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Contents

Patent abstractTimelineTable: Further ResourcesReferences
Is a
Patent
Patent
1

Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
1
Patent Number
120161311
Patent Inventor Names
Ronald S. Cok1
Christopher Andrew Bower1
Matthew Alexander Meitl1
Date of Patent
June 18, 2024
1
Patent Application Number
175665931
Date Filed
December 30, 2021
1
Patent Citations
‌
US Patent 9704821 Stamp with structured posts
1
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US Patent 9865600 Printed capacitors
1
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US Patent 9923133 Structures and methods for testing printable integrated circuits
1
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US Patent 10396137 Testing transfer-print micro-devices on wafer
1
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US Patent 10748793 Printing component arrays with different orientations
1
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US Patent 11710680 RF devices with enhanced performance and methods of forming the same
1
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US Patent 8525167 Laminated chips package, semiconductor substrate and method of manufacturing the laminated chips package
1
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US Patent 8722458 Optical systems fabricated by printing-based assembly
1
...
Patent Primary Examiner
‌
Xiaoliang Chen
1
CPC Code
‌
H01L 24/03
1
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H01L 24/06
1
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H01L 24/49
1
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H01L 24/92
1
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H01L 24/97
1
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H01L 24/98
1
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H01L 25/075
1
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H01L 25/0753
1
...
Patent abstract

A device source wafer includes a wafer substrate, devices formed on or in the wafer substrate at a location on the wafer substrate, and test structures disposed on the wafer substrate connected to some but not all of the devices. The devices include a first device disposed at a first location and a second device disposed at a second different location on the wafer substrate. The test structures include at least a first test structure connected to the first device and a second test structure connected to the second device. The first test structure is adapted to measuring a characteristic of the first device and the second test structure is adapted to measuring the characteristic of the second device. An estimated characteristic of unmeasured devices is derived from the first and second device locations and measured characteristics and the device is selected based on the estimated characteristic.

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