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US Patent 11996145 Cross-point array with threshold switching selector memory element

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Is a
Patent
Patent
0

Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
119961450
Patent Inventor Names
Hans Jurgen Richter0
Michael K. Grobis0
Date of Patent
May 28, 2024
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Patent Application Number
177352770
Date Filed
May 3, 2022
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Patent Citations
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US Patent 10727405 Chalcogenide memory device components and composition
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US Patent 10424374 Programming enhancement in self-selecting memory
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US Patent 10490738 Resistive switching memory cell
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US Patent 7414883 Programming a normally single phase chalcogenide material for use as a memory or FPLA
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US Patent 8847186 Self-selecting PCM device not requiring a dedicated selector transistor
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US Patent 9099639 Resistance switching material element and device employing the same
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US Patent 9595668 Self-rectifying RRAM element
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Patent Primary Examiner
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Douglas King
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Patent abstract

Technology is disclosed for a memory system having a cross-point array with threshold switching selector memory cells. Each memory cell has a two-terminal threshold switching selector memory element that may be programmed to two different on-state conductances in order to store information. One bit value may be represented by a high-resistance state (HRS) when in the on-state and another bit value may be represented by a low-resistance state (LRS) when in the on-state. In one aspect, a conditioning signal is applied to the memory cell prior to programming. Applying a program signal with the opposite polarity as the conditioning signal may result in a higher conductance in the on-state than applying a program signal with the same polarity as the conditioning signal. The memory element may also serve as a selector for the memory cell. The memory element may include an Ovonic Threshold Switch (OTS).

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