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US Patent 11988611 Systems for parsing material properties from within SHG signals

Patent 11988611 was granted and assigned to Femtometrix, Inc. on May, 2024 by the United States Patent and Trademark Office.

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Contents

Is a
Patent
Patent
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Patent attributes

Patent Applicant
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Femtometrix, Inc.
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Current Assignee
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Femtometrix, Inc.
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
119886110
Patent Inventor Names
Jianing Shi0
John Paul Changala0
Viktor Koldiaev0
Marc Christopher Kryger0
Date of Patent
May 21, 2024
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Patent Application Number
174547590
Date Filed
November 12, 2021
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Patent Citations
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US Patent 7202691 Non-contact method for acquiring charge-voltage data on miniature test areas of semiconductor product wafers
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US Patent 7248062 Contactless charge measurement of product wafers and control of corona generation and deposition
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US Patent 7259868 Method for determining the optical nonlinearity profile of a material
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US Patent 7304305 Difference-frequency surface spectroscopy
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US Patent 7324267 Four-wave-mixing based optical wavelength converter device
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US Patent 7333192 Apparatus and method for inspecting defects
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US Patent 7355618 Image exposure apparatus
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US Patent 7362496 Fiber gain medium and method of coupling pump energy into the same
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Patent Primary Examiner
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Tung S Lau
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CPC Code
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H01M 2300/0068
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G16C 20/00
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G16C 20/30
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G16Z 99/00
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G01N 21/95
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G01N 21/63
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G01N 2201/06113
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G01N 21/8851
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Patent abstract

Semiconductor metrology systems based on directing radiation on a wafer, detecting second harmonic generated (SHG) radiation from the wafer and correlating the second harmonic generated (SHG) signal to one or more electrical properties of the wafer are disclosed. The disclosure also includes parsing the SHG signal to remove contribution to the SHG signal from one or more material properties of the sample such as thickness. Systems and methods described herein include machine learning methodologies to automatically classify obtained SHG signal

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