Patent attributes
The present application relates to a semiconductor structure and its forming method. The semiconductor structure comprises a substrate; a first transistor that includes a first channel disposed within the substrate, and a first end disposed at surface of the substrate, the first end being adapted to connect with a first-type storage cell; a second transistor that includes a second channel disposed within the substrate, and a second end disposed at surface of the substrate, the second end being adapted to connect with a second-type storage cell, the second channel having a length greater than length of the first channel. The present application enables fabrication techniques of the first transistor and the second transistor compatible. Moreover, the present application is conducive to enhancing integration density of the storage cells of the first transistor and/or the second transistor in the memory lays foundation for enlarging the fields of application of the memory.
