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US Patent 11952664 Substrate processing apparatus and method of manufacturing semiconductor device

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Contents

Is a
Patent
Patent
0

Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
119526640
Patent Inventor Names
Hidenari Yoshida0
Hiroaki Hiramatsu0
Takeo Hanashima0
Date of Patent
April 9, 2024
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Patent Application Number
180776070
Date Filed
December 8, 2022
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Patent Citations
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US Patent D600659 Process tube for manufacturing semiconductor wafers
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US Patent D610559 Reaction tube
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US Patent D770993 Reaction tube
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US Patent D772824 Reaction tube
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US Patent D790490 Reaction tube
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US Patent D791090 Reaction tube
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US Patent 10808318 Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium
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US Patent 10811271 Substrate processing device, manufacturing method for semiconductor device, and reaction tube
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...
Patent Primary Examiner
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Jeffrie R. Lund
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CPC Code
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C23C 16/52
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C23C 16/44
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H01L 21/02123
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H01L 21/67017
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H01L 21/67109
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H01L 21/02164
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C23C 16/4412
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H01L 21/0228
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...
Patent abstract

Described herein is a technique capable of improving the uniformity of the film formation among the substrates. According to the technique described herein, there is provided a configuration including: a reaction tube having a process chamber where a plurality of substrates are processed; a buffer chamber protruding outward from the reaction tube and configured to supply a process gas to the process chamber, the buffer chamber including: a first nozzle chamber where a first nozzle is provided; and a second nozzle chamber where a second nozzle is provided; an opening portion provided at a lower end of an inner wall of the reaction tube facing the buffer chamber; and a shielding portion provided at a communicating portion of the opening portion between the second nozzle chamber and the process chamber.

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