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US Patent 11948959 Imaging device comprising first circuit and second circuit
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Is a
Patent
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Date Filed
July 18, 2019
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Date of Patent
April 2, 2024
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Patent Application Number
17258805
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Patent Citations
US Patent 10498980 Imaging device comprising n-channel oxide semiconductor transistors, photoelectric conversion element, and capacitor
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US Patent 9331112 Semiconductor device including an oxide semiconductor layer
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US Patent 9773814 Semiconductor device
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US Patent 8378391 Semiconductor device including image sensor
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US Patent 8860108 Oxide-based thin-film transistor (TFT) semiconductor memory device having source/drain electrode of one transistor connected to gate electrode of the other
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US Patent 8916869 Semiconductor device including an oxide semiconductor layer
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Patent Inventor Names
Kei Takahashi
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Naoto Kusumoto
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
11948959
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Patent Primary Examiner
Nduka E Ojeh
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CPC Code
H01L 31/107
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H01L 27/14636
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