US Patent 11948897 Transient stabilized SOI FETs
Patent 11948897 was granted and assigned to pSemi on April, 2024 by the United States Patent and Trademark Office.
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US Patent 11948897 Transient stabilized SOI FETs
Article
Patent abstract
Integrated circuits (ICs) that avoid or mitigate creation of changes in accumulated charge in a silicon-on-insulator (SOI) substrate, particularly an SOI substrate having a trap rich layer. In one embodiment, a FET is configured such that, in a standby mode, the FET is turned OFF while maintaining essentially the same V
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Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Christopher C. Murphy0
Keith Bargroff0
Robert Mark Englekirk0
Simon Edward Willard0
Tero Tapio Ranta0
Date of Patent
April 2, 2024
0Patent Application Number
176698120
Date Filed
February 11, 2022
0Patent Citations
Patent Primary Examiner
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