US Patent 11943908 Method, structures and devices for intra-connection structures
Patent 11943908 was granted and assigned to Taiwan Semiconductor Manufacturing Company on March, 2024 by the United States Patent and Trademark Office.
All edits
US Patent 11943908 Method, structures and devices for intra-connection structures
Systems and methods are provided for forming an intra-connection structure. A first gate structure and a first source/drain region adjacent to the first gate structure is formed on a substrate. A first dielectric material is disposed on the first source/drain region. A spacer material is formed on the first gate structure. The first dielectric material is removed to expose at least part of the first source/drain region. At least part of the spacer material is removed to expose at least part of the first gate structure. A first conductive material is formed between the first gate structure and the first source/drain region to electrically connect the first source/drain region and the first gate structure.
Find more entities like US Patent 11943908 Method, structures and devices for intra-connection structures
